The Michigan Nanofabrication Facility (MNF) facility consists of a 6,000 sq. ft class 100/10 cleanroom backed by ~25,000 sq. ft. of support facilities. It contains five process bays (silicon lithography/diffusion, silicon LPCVD, compound semiconductor devices, thin-film deposition, and dry etching) plus five connected rooms for e-beam lithography, metrology, and III-V materials growth. In-house metrology includes SEM, spectroscopic ellipsometry, Hall, AFM, and profilometry. Further characterization facilities are available through the U of M Electron Microbeam Analysis Laboratory (EMAL) and the Hannawalt X-Ray Diffraction Laboratory, which include FE-SEM, Auger, XPS, TEM, and high-resolution X-Ray diffraction and grazing-incidence X-ray reflectometry. In addition to EMAL, the Michigan Ion Beam Surface Modification and Analysis Laboratory (MIBL) provides additional metrology capabilities such as Rutherford Backscatter Spectrometry, Nuclear Reaction Analysis and Elastic Recoil Detection. U-M NNIN staff will assist users with this full battery of characterization tools.