Sung Hyun Jo won 1st prize at the Raith Micrograph Award 2008!
Congratulations to Sung Hyun Jo who won the 1st prize at the Raith Micrograph Award 2008 competition! Sung Hyun is a graduate student working with prof Wei Lu at the University of Michigan Solid State Electronics Laboratory and a user of the Lurie Nanofabrication Facility. 1kb Crosspoint RRAM (Resistive Random Access Memory). Beyond the transistor scaling limit, the crossbar scheme offers ultimate scaling property and inherent defect tolerant capability. Each cross-point works as an individual nonvolatile memory cell of which the resistance switching medium is an a-Si layer sandwiched by two electrodes. Depending on bias, the junction can change its resistance more than five orders of magnitude within a few tens of nanosecond. The device was fabricated by e-beam lithography (Raith 150), PECVD (GSI), RIE (LAM) and PVD (Cooke Evaporator), proving sophisticated nanofabrication capability of LNF. The Raith application team applied the following criteria to select the most attractive micrographs
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