Pallab Bhattacharya received
the B.S. degree in physics in 1968, the B.Tech. and M.Tech degrees in radio
physics and electronics in 1970 and 1971, respectively, all from the University
of Calcutta, India. He received
the M.Eng. and Ph.D. degrees from the University of Sheffield, UK, in 1976 and
1978, respectively. From 1978 to
1983, he was a member of the Electrical Engineering faculty at Oregon State
University. Since 1984 he has been
with the University of Michigan.
He was an Invited Professor at the Ecole Polytechnic Federale de
Lausanne, Switzerland, from 1981 to 1982. He is currently the Charles M. Vest
Distinguished University Professor of Electrical Engineering and Computer
Science and the James R. Mellor Professor of Engineering in the Department of
Electrical Engineering and Computer Science at the University of Michigan, Ann
Arbor. He was an Editor of the
IEEE Transactions on Electron Devices and is Editor-in-Chief of Journal of
Physics D. He has edited
Properties of Lattice-Matched and Strained InGaAs (UK: INSPEC, 1993) and Properties of III-V
Quantum Wells and Superlattices (UK:
INSPEC, 1996). He is author
of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd
edition).
He is a Fellow of the IEEE,
the American Physical Society, the Institute of Physics (UK), and the Optical
Society of America. His teaching and research interests are in the areas of
compound semiconductors, low-dimensional quantum confined systems,
nanophotonics and optoelectronic integrated circuits. He is currently working on high-speed quantum dot lasers,
quantum dot infrared photodetectors, photonic crystal quantum dot devices, and
spin-based heterostructure devices.
Research Interests: Compound semiconductor materials growth and
characterization, optoelectronic devices and device physics
Research Areas: Optics and Photonics; Quantum Science and
Engineering; Solid-State Devices, Theory and Technology.
Areas of Specialty: Optoelectronics; Integrated Photonics and
Optoelectronics with Quantum Confined Heterostructures; High Frequency Devices
and Circuits; Materials for Solid State Electronic and Optoelectronic Devices.
Selected Projects: Quantum Dot Photonics Crystal Microcavity Light
Emitter; Quantum Dot Photodetectors for THz Detection; Long Wavelength (1.55 ìm)
InAs Quantum Dot Lasers on GaAs; Quantum Dot Lasers and Integrated Guided-Wave
Devices Monolithically Grown on Si; III-Nitride Quantum Well and Quantum Dot
Opto-Electronic Devices; Hybrid Ferromagnet Semiconductor Spintronics; Long
Wavelength (1.55 um) InAs Quantum Dot Lasers on GaAs; Spintronic Lasers for
Polarization Control and Modulation.
